The insulated gate bipolar transistor or IGBT combines the simple gate drive characteristics of the MOSFET with the high current and low saturation voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
The IGBT is mainly used in switching power supplies and motor control applications. The first-generation devices of the IGBT were relatively slow in switching, and prone to failure through such modes as latchup and secondary breakdown. Second-generation devices were much improved, and the current third-generation ones are even better, with speed rivaling MOSFETs, and excellent ruggedness and tolerance of overloads.
Low noise and high gain
Operation in low voltage
Miniaturization and high density assembly