
M9 (MOSFET) – the module of single key MOSFET is intended for commutation of power loads and use composed of power converters with high switching frequency. M9 (IGBT) – single IGBT module, shunted by reverse FRD, is intended for commutation of power loads and use composed of power converters with high switching frequency. M10 – tandem IGBT, shunted by reverse FRS and FRD is intended for use in the capacity of switching elements in power converters. M11 – tandem FRD and IGBT key, shunted by reverse FRD is intended for use in the capacity of switching elements in power converters. M12 – two tandem MOSFET or IGBT keys shunted by reverse FRD is intended for use in the capacity of switching elements in power converters.

M9 (MOSFET) ? the module of single key MOSFET is intended for commutation of power loads and use composed of power converters with high switching frequency. M9 (IGBT) ? single IGBT module, shunted by reverse FRD, is intended for commutation of power loads and use composed of power converters with high switching frequency. M10 ? tandem IGBT, shunted by reverse FRS and FRD is intended for use in the capacity of switching elements in power converters. M11 tandem FRD and IGBT key, shunted by reverse FRD is intended for use in the capacity of switching elements in power converters. M12 ? two tandem MOSFET or IGBT keys shunted by reverse FRD is intended for use in the capacity of switching elements in power converters.
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| Optoelectronic AC Relay For Mounting To Circuit Plate. | Semiconductor Relay On Basis Of Field Transistors Or Igbt With Galvanic Decouhling Of Optron Or Tran | Power Regulators Modules. | Strength Members. |




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